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IGBT Transistor IRG4PH50KD G4PH50KD IRG4PH50KDPBF
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Key attributes
Industry-specific attributes
Model Number
IRG4PH50KDPBF
Type
IGBT Transistor
Brand Name
Original Brand
Package Type
Throught Hole
Other attributes
Place of Origin
Original
Package / Case
TO-247-3
D/C
Newest
Supplier Type
Agency
Media Available
datasheet, Photo
Brand
IGBT 1200V 45A 200W TO247AC
Current - Collector (Ic) (Max)
45A
Voltage - Collector Emitter Breakdown (Max)
1200V
Power - Max
200W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 24A
Applications
active
Type
Bipolar Junction Transistor
Lead Free Status
Lead free/RoHS
Lead time
In stock
Supply Voltage
Common
Operating Temperature
Standard
Lowest price
Plz contact us
Skype
michella_fang
Shipping by
DHL\UPS\Fedex\EMS\HK Post
Payment
Paypal/TT/Western Union/Credit card
Packaging and delivery
Packaging Details
Original package
Port
Shenzhen/Hong Kong
Supply Ability
Supply Ability
10000 Piece/Pieces per Day
Lead time
| Quantity (pieces) | 1 - 3000 | > 3000 |
| Lead time (days) | 3 | To be negotiated |
Customization
Customized packaging
Min. order: 100000
For more customization details, message supplier
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Evaluated as top-rated supplierProduct descriptions from the supplier
Minimum order quantity: 1 piece
$0.80 - $1.50Quantity
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$0.00
Shipping total
$0.00
Subtotal
$0.00
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